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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1488 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max)@IC= 7A *Wide Area of Safe Operation *Complement to Type 2SB1057 APPLICATIONS *Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i 150 V 150 V 5 V 9 A 15 A 3 W UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 100 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1488 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 7A; VCE= 5V 1.8 V A ICBO Collector Cutoff Current VCB= 150V; IE= 0 50 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 A hFE-1 DC Current Gain IC= 20mA; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-2 Classifications R 40-80 Q 60-120 w w P 100-200 scs .i w IC= 7A; VCE= 5V IE= 0; VCB= 10V; f= 1.0MHz IC= 0.5A; VCE= 10V .cn mi e 40 20 200 450 pF 20 MHz isc Websitewww.iscsemi.cn 2 |
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